GeneSiC Semiconductor Inc.

High Voltage circuits and assemblies to benefit from SiC chips that offer unprecedented voltage ratings and ultra-high speed switching

Low Inductance, higher temperature capability of Co-packaged mini-modules pushes IGBTs into new applications

R&D Magazine has selected GeneSiC Semiconductor Inc. of Dulles, VA as a recipient of the prestigious 2011 R&D 100 Award for the commercialization of Silicon Carbide devices with high voltage ratings.

GeneSiC, Dow, Lockheed Martin to be featured at DC Event February 28 - March 2

GeneSiC announces its selection towards development of high temperature power devices for NASA applications. The devices will be optimized for operation under Venus-like ambients (500 °C surface temperatures) for use in motor control power modules.

GeneSiC Semiconductor announces the availability of a family of 6.5kV Silicon Carbide Thyristors that are expected to spur key innovations in grid-based power electronics to increase the availability of grid-tied solar and wind power resources.