GeneSiC Semiconductor Inc.

GeneSiC expands its portfolio of industry-leading 3rd generation silicon carbide MOSFETs with 750V G3R™ that offer superior performance, robustness and quality to realize highest levels of efficiency and system reliability

GeneSiC announces availability of revolutionary 650V SiC Schottky MPS™ diodes featuring low built-in voltage to harness unprecedented efficiency levels

GeneSiC announces the availability of its industry-leading 3rd generation Silicon Carbide MOSFETs that feature industry-leading performance, robustness and quality to harness never before seen levels of efficiency and system reliability in automotive

GeneSiC releases 6.5kV silicon carbide MOSFETs to lead the forefront in delivering unprecedented levels of performance, efficiency and reliability.

Co-packaged SiC Transistor-Diode combination in a robust, isolated, 4-Leaded, mini-module packaging reduces Turn-On energy losses and enables flexible circuit designs for high frequency power converters

High Temperature (>225oC) Junction Transistors and Rectifiers in small form factor metal can packages offer revolutionary performance benefits to a variety of applications including amplification, low noise circuitry and downhole actuator controls

Gate Driver Board optimized for high switching speeds and behavior-based models enable power electronic design engineers to verify and quantify benefits of SJTs in board-level evaluation and circuit simulation

SiC switches offering lowest conduction losses and superior short circuit capability released for High Frequency Power Circuits

The promise of high temperature in SiC Transistors realized through compatible industry-standard packages will critically enhance downhole and aerospace actuators and power supplies

High Voltage, Reverse Recovery-free SiC Schottky Diodes to critically enable Solar Inverters and High Voltage assemblies by offering smallest form factor surface mount capabilities